Characteristic molecular properties of one-electron double quantum rings under magnetic fields

The molecular states of conduction electrons in laterally coupled quantum rings are investigated theoretically. The states are shown to have a distinct magnetic field dependence, which gives rise to periodic fluctuations of the tunnel splitting and ring angular momentum in the vicinity of the ground state crossings. The origin of these effects can be traced back to the Aharonov-Bohm oscillations of the energy levels, along with the quantum mechanical tunneling between the rings. We propose a setup using double quantum rings which shows that Aharonov-Bohm effects can be observed even if the net magnetic flux trapped by the carriers is zero.Comment: 16 pages (iopart format), 10 figures, accepted in J.Phys.Cond.Mat

Dielectric confinement of excitons in type-I and type-II semiconductor nanorods

We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift the emission peak by tens of meV. These effects are particularly pronounced for type-II nanorods. In these structures, the dielectric confinement may even modify the spatial distribution of electron and hole charges. A critical electric field is required to separate electrons from holes, whose value increases with the insulating strength of the surroundings.Comment: Journal of Physics: Condensed Matter (in press

Electronic structure of few-electron concentric double quantum rings

The ground state structure of few-electron concentric double quantum rings is investigated within the local spin density approximation. Signatures of inter-ring coupling in the addition energy spectrum are identified and discussed. We show that the electronic configurations in these structures can be greatly modulated by the inter-ring distance: At short and long distances the low-lying electron states localize in the inner and outer rings, respectively, and the energy structure is essentially that of an isolated single quantum ring. However, at intermediate distances the electron states localized in the inner and the outer ring become quasi-degenerate and a rather entangled, strongly-correlated system is formed.Comment: 16 pages (preprint format), 6 figure

Magnetic field dependence of hole levels in self-assembled InAs quantum dots

Recent magneto-transport experiments of holes in InGaAs quantum dots [D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, O. Wibbelhoff, C. Meier, A. Lorke, and J.C. Maan, Phys. Rev. Lett. 94, 026808 (2005)] are interpreted by employing a multi-band kp Hamiltonian, which considers the interaction between heavy hole and light hole subbands explicitely. No need of invoking an incomplete energy shell filling is required within this model. The crucial role we ascribe to the heavy hole-light hole interaction is further supported by one-band local-spin-density functional calculations, which show that Coulomb interactions do not induce any incomplete hole shell filling and therefore cannot account for the experimental magnetic field dispersion.Comment: 5 pages with 3 figures and one table. The paper has been submitted to Phys.Rev.

La meteorología en la enseñanza de las ciencias experimentales : una propuesta interdisciplinar e integradora

In this paper the authors describe a possible introduction of Meteorology into the new secondary education. A didactic approach, as well as examples of contents and activities, is proposed

Generalized method of image dyons for quasi-two dimensional slabs with ordinary-topological insulator interfaces

Electrostatic charges near the interface bewteen topological (TI) and ordinary (OI) insulators induce magnetic fields in the medium that can be described through the so-called method of image dyons (electric charge - magnetic monopole pairs), the magnetoelectric extension of the method of image charges in classical electrostatics. Here, we provide the expressions for the image dyons and ensuing magnetoelectric potentials in a system comprised by two planar-parallel OI-TI interfaces conforming a finite-width slab. The obtained formulae extend earlier work in that they account for all different combinations of materials forming the slab and its surroundings, including asymmetric systems, as well as all possible combinations of external magnetization orientations on the interfaces. The equations are susceptible of implementation in simple computational codes, to be solved recurrently, in order to model magnetoelectric fields in topological quantum wells, thin films, or layers of two-dimensional materials. We exemplify this by calculating the magnetic fields induced by a point charge in nanometer-thick quantum wells, by means of a Mathematica code made available in repositories.Comment: 9 pages, 7 figure